Aberration-corrected self-interference of split higher order Laue zone line for measuring the z-dependent strain profile

Publisher： Cambridge University Press

E-ISSN： 2044-5326|32|5|996-1008

ISSN： 0884-2914

Source： Journal of Materials Research, Vol.32, Iss.5, 2017-01, pp. : 996-1008

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Observation of compound semiconductors and heterovalent interfaces using aberration-corrected scanning transmission electron microscopy

By  

Journal of Materials Research, Vol. 32, Iss. 5, 2016-08 ,pp. : 921-927

Cambridge University Press

Access to resources Recommend Favorite

Recent studies of oxide-semiconductor heterostructures using aberration-corrected scanning transmission electron microscopy

By  

Journal of Materials Research, Vol. 32, Iss. 5, 2016-08 ,pp. : 912-920

Cambridge University Press

Access to resources Recommend Favorite

New insights on ion track morphology in pyrochlores by aberration corrected scanning transmission electron microscopy

By  

Journal of Materials Research, Vol. 32, Iss. 5, 2016-12 ,pp. : 928-935

Cambridge University Press

Access to resources Recommend Favorite

Study of phase separation in an InGaN alloy by electron energy loss spectroscopy in an aberration corrected monochromated scanning transmission electron microscope

By  

Journal of Materials Research, Vol. 32, Iss. 5, 2016-12 ,pp. : 983-995

Cambridge University Press

Access to resources Recommend Favorite

A Methodology for Measuring Size-Dependent Chemical Composition of Ultrafine Particles

By Geller Michael D.   Kim Seongheon   Misra Chandan   Sioutas Constantinos   Olson Bernard A.   Marple Virgil A.  

Aerosol Science and Technology, Vol. 36, Iss. 6, 2002-06 ,pp. : 748-762

Taylor & Francis Ltd

Access to resources Recommend Favorite