Wet‐Chemical Etching of GaN: Underlying Mechanism of a Key Step in Blue and White LED Production

Publisher： John Wiley & Sons Inc

E-ISSN： 2365-6549|3|5|1480-1494

ISSN： 2365-6549

Source： ChemistrySelect, Vol.3, Iss.5, 2018-02, pp. : 1480-1494

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Fine Structure of the Blue Photoluminescence in High-Purity Hexagonal GaN Films

By Gruzintsev A.N.   Kaiser U.   Khodos I.I.   Richter W.  

Inorganic Materials, Vol. 37, Iss. 6, 2001-06 ,pp. : 591-594

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Chemical Vapor Deposition of GaN from Gallium and Ammonium Chloride

By Red'kin A. N.   Tatsii V. I.   Makovei Z. I.   Gruzintsev A. N.   Yakimov E. E.  

Inorganic Materials, Vol. 40, Iss. 10, 2004-10 ,pp. : 1049-1053

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Application of poly(fluorene- co -bithiophene) as a novel sensitizer for TiO 2 in the photodegradation of phenol under irradiation of GaN LED clusters

By Song Lin  

Reaction Kinetics, Mechanisms and Catalysis, Vol. 102, Iss. 2, 2011-04 ,pp. : 295-302

Springer Publishing Company

Access to resources Recommend Favorite

The etching behavior of n-GaP in aqua regia solutions

By Chang K.   Lee C.   Hsu J.   Hsieh H.   Shih H.  

Journal of Applied Electrochemistry, Vol. 35, Iss. 1, 2005-01 ,pp. : 77-84

Springer Publishing Company

Access to resources Recommend Favorite

Advances in GaN Crystals and Their Applications

By Lo Ikai  

Crystals, Vol. 8, Iss. 3, 2018-03 ,pp. : 117-117

MDPI

Access to resources Recommend Favorite