Analysis of stress-induced mobility enhancement on (100)-oriented single- and double-gate n-MOSFETs using silicon-thickness-dependent deformation potential

Publisher： IOP Publishing

E-ISSN： 1361-6641|30|4|45009-45016

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.30, Iss.4, 2015-01, pp. : 45009-45016

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