Influence of the AlGaN barrier thickness on polarization Coulomb field scattering in an AlGaN/AlN/GaN heterostructure field-effect transistor

Author: Yuan-Jie Lv   Zhi-Hong Feng   Guo-Dong Gu   Jia-Yun Yin   Yu-Long Fang   Yuan-Gang Wang   Xin Tan   Xing-Ye Zhou   Zhao-Jun Lin   Zi-Wu Ji   Shu-Jun Cai  

Publisher: IOP Publishing

E-ISSN: 1741-4199|24|8|87306-87310

ISSN: 1674-1056

Source: Chinese Physics B, Vol.24, Iss.8, 2015-08, pp. : 87306-87310

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