Author: Morales F.M. Mánuel J.M. García R. Reuters B. Kalisch H. Vescan A.
Publisher: IOP Publishing
ISSN: 0022-3727
Source: Journal of Physics D: Applied Physics, Vol.46, Iss.24, 2013-06, pp. : 245502-245508
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Abstract
Structural and compositional data were collected for several high-quality strained InGaN, InAlN, AlGaN and InAlGaN layers with various compositions. Based on these results, the InN/AlN/GaN molar fractions of every film were indirectly estimated by the application of Vegard's law (Vegard 1921
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