Effects of electrical stress on mid-gap interface trap density and capture cross sections in n-MOSFETs characterized by pulsed interface probing measurements

Author： Kwon H.I.   Man Kang I.   Park B.-G.   Duk Lee J.   Sik Park S.   Chak Ahn J.   Hee Lee Y.  

Publisher： Elsevier

ISSN： 0026-2714

Source： Microelectronics Reliability, Vol.44, Iss.1, 2004-01, pp. : 47-51

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