Etching Characteristics and Mechanisms of Mo and Al 2 O 3 Thin Films in O 2 /Cl 2 /Ar Inductively Coupled Plasmas: Effect of Gas Mixing Ratios

Author： Kang Sungchil

Publisher： Springer Publishing Company

ISSN： 0272-4324

Source： Plasma Chemistry and Plasma Processing, Vol.33, Iss.2, 2013-04, pp. : 527-538

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