A GaN–AlGaN–InGaN last quantum barrier in an InGaN/GaN multiple-quantum-well blue LED

By Bin Yang   Zhi-You Guo   Nan Xie   Pan-Jun Zhang   Jing Li   Fang-Zheng Li   Hong Lin   Huan Zheng   Jin-Xin Cai  

Chinese Physics B, Vol. 23, Iss. 4, 2014-04 ,pp. : 48502-48505

IOP Publishing

Access to resources Recommend Favorite

Enhanced performance of GaN-based light-emitting diodes with InGaN/GaN superlattice barriers

By Jin-Xin Cai   Hui-Qing Sun   Huan Zheng   Pan-Jun Zhang   Zhi-You Guo  

Chinese Physics B, Vol. 23, Iss. 5, 2014-05 ,pp. : 58502-58505

IOP Publishing

Access to resources Recommend Favorite

Simulation of InGaN/GaN multiple quantum well light-emitting diodes with quantum dot model for electrical and optical effects

By Xia C.   Hu W.   Wang C.   Li Z.   Chen X.   Lu W.   Li Z.   Li Z.  

Optical and Quantum Electronics, Vol. 38, Iss. 12-14, 2006-09 ,pp. : 1077-1089

Springer Publishing Company

Access to resources Recommend Favorite

Enhanced light emission from InGaN/GaN quantum wells by using surface plasmonic resonances of silver nanoparticle array

By  

Chinese Physics B, Vol. 23, Iss. 12, 2014-12 ,pp. : 128504-128508

IOP Publishing

Access to resources Recommend Favorite

Effect of growth temperature of GaN:Mg layer on internal quantum efficiency of LED structures with InGaN/GaN quantum wells

By  

Journal of Physics: Conference Series , Vol. 541, Iss. 1, 2014-10 ,pp. : 435-438

IOP Publishing

Access to resources Recommend Favorite