Lateral carrier confinement and threshold current reduction in InGaN QW lasers with deeply etched mesa

Author： Satter Md.  

Publisher： Springer Publishing Company

ISSN： 0306-8919

Source： Optical and Quantum Electronics, Vol.42, Iss.11-13, 2011-10, pp. : 747-754

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Electroluminescence and absorption spectra of low-optical-loss semiconductor lasers based on InGaAs/AlGaAs/GaAs QW heterostructures

By Slipchenko S.   Podoskin A.   Pikhtin N.   Stankevich A.   Rudova N.   Leshko A.   Tarasov I.  

Semiconductors, Vol. 45, Iss. 5, 2011-05 ,pp. : 673-678

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Lateral electron tunnelling spectroscopy in etched GaAs/AlGaAs-based nanostructures

By  

Journal of Physics: Conference Series , Vol. 193, Iss. 1, 2009-11 ,pp. : 172-177

IOP Publishing

Access to resources Recommend Favorite

Accurate modelling of InGaN quantum wells

By Wenzel Hans  

Optical and Quantum Electronics, Vol. 38, Iss. 12-14, 2006-09 ,pp. : 953-961

Springer Publishing Company

Access to resources Recommend Favorite

Threshold current reduction due to piezoelectric effects in InGaAs/AlGaAs laser diodes

By  

Journal of Physics: Conference Series , Vol. 10, Iss. 1, 2005-01 ,pp. : 35-38

IOP Publishing

Access to resources Recommend Favorite

GaAs/AlGaAs quantum cascade lasers with dry etched semiconductor–air Bragg reflectors

By Golka S.   Austerer M.   Pflügl C.   Andrews A. M.   Roch T.   Schrenk W.   Strasser G.  

Journal of Modern Optics, Vol. 52, Iss. 16, 2005-11 ,pp. : 2303-2308

Taylor & Francis Ltd

Access to resources Recommend Favorite