Room-temperature optical absorption in the InAs/GaAs quantum-dot superlattice under an electric field

Author： Sobolev M.   Gadzhiev I.   Bakshaev I.   Nevedomskii V.   Buyalo M.   Zadiranov Yu.   Portnoi E.  

Publisher： MAIK Nauka/Interperiodica

ISSN： 1063-7826

Source： Semiconductors, Vol.45, Iss.8, 2011-08, pp. : 1064-1069

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

High Characteristic Temperature 1.3 μm InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy

By Hai-Ming Ji   Tao Yang   Yu-Lian Cao   Peng-Fei Xu   Yong-Xian Gu   Wen-Quan Ma   Zhan-Guo Wang  

Chinese Physics Letters, Vol. 27, Iss. 2, 2010-02 ,pp. : 27801-27803

IOP Publishing

Access to resources Recommend Favorite

Optical and electrical properties of stacked binary InAs-GaAs quantum dot structures prepared under Surfactant-mediated growth conditions

By  

Journal of Physics: Conference Series , Vol. 245, Iss. 1, 2010-09 ,pp. : 290-294

IOP Publishing

Access to resources Recommend Favorite

Growth, optical properties and device characterisation of InAs/GaAs quantum dot bilayers

By  

Journal of Physics: Conference Series , Vol. 107, Iss. 1, 2008-03 ,pp. : 26-35

IOP Publishing

Access to resources Recommend Favorite

Effect of substrate misorientation on quantum-dot size distribution in the InAs/GaAs system

By Vasil’ev D.   Evtikhiev V.   Tokranov V.   Kudryashov I.   Kochereshko V.  

Physics of the Solid State, Vol. 40, Iss. 5, 1998-05 ,pp. : 787-789

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

OPTICAL BISTABILITY, REGENERATIVE PULSATIONS, AND TRANSVERSE EFFECTS IN ROOM-TEMPERATURE GaAs-AlGaAs SUPERLATTICE ETALONS

By  

Le Journal de Physique Colloques, Vol. 44, Iss. C2, 1983-03 ,pp. : C2-195-C2-204

Edp Sciences

Access to resources Recommend Favorite