Characteristics of GaN epilayer grown on Al 2 O 3 with AlN buffer layer by molecular beam epitaxy

Author： Jeon H.C.   Lee H.S.   Si S.M.   Jeong Y.S.   Na J.H.   Park Y.S.   Kang T.W.   Eung Oh J.  

Publisher： Elsevier

ISSN： 1567-1739

Source： Current Applied Physics, Vol.3, Iss.4, 2003-06, pp. : 385-388

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