Investigation of the Role of Aspect Ratio for the Design of Si-Nanowire Field-Effect-Transistors in Ballistic Regime

Author： Chowdhury Basudev Nag Chattopadhyay Sanatan

Publisher： American Scientific Publishers

ISSN： 1941-4900

Source： Nanoscience and Nanotechnology Letters, Vol.5, Iss.10, 2013-10, pp. : 1087-1090

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