Author: Buschmann V. Fedina L. Rodewald M. Tendeloo G.V.
Publisher: Taylor & Francis Ltd
ISSN: 1362-3036
Source: Philosophical Magazine Letters, Vol.77, Iss.3, 1998-03, pp. : 147-152
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Self-ordering of CoSi 2 precipitates and epitaxial layer growth of CoSi 2 on Si(100)
By Mantl S. Hacke M. Bay H.L. Kappius L. Mesters S.
Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. :
Comparison of epitaxial growth of CoSi 2 among Co/Ti, Co/Hf, and Co/Nb bilayers on (100)Si
Thin Solid Films, Vol. 380, Iss. 1, 2000-12 ,pp. :
CoSi 2 and TiSi 2 for Si/SiGe heterodevices
By Gluck M. Schuppen A. Rosler M. Heinrich W. Hersener J. Konig U. Yam O. Eizenberg M. Cytermann C.
Thin Solid Films, Vol. 270, Iss. 1, 1995-12 ,pp. :
Growth of CoSi 2 films on Si (100) substrates by a two-step method
By Shi J. Irie T. Takahashi F. Hashimoto M.
Thin Solid Films, Vol. 375, Iss. 1, 2000-10 ,pp. :