Author： Soyalp Fethi
Publisher： Taylor & Francis Ltd
ISSN： 1478-6443
Source： Philosophical Magazine, Vol.91, Iss.3, 2011-01, pp. : 468-476
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
A study of the NiSi to NiSi 2 transition in the Ni-Si binary system 1
By Julies B.A. Knoesen D. Pretorius R. Adams D.
Thin Solid Films, Vol. 347, Iss. 1, 1999-06 ,pp. :
Access to resources
Recommend
Crystallization of amorphous silicon by NiSi 2 precipitates
By Schoenfeld O. Zhao X. Aoyagi Y. Hempel T.
Thin Solid Films, Vol. 261, Iss. 1, 1995-06 ,pp. :
By Teichert S. Falke M. Giesler H. Beddies G. Hinneberg H.J.
Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. :
Activation energy for Ni 2 Si and NiSi formation measured over a wide range of ramp rates
By Colgan E.G.
Thin Solid Films, Vol. 279, Iss. 1, 1996-06 ,pp. :