Influence of Phosphorus Doping in the Active Layer with Deposition Time and Gas Flow Rate in a-Si:H Thin Film Transistor

Author： Kim Byung-Ju

Publisher： Taylor & Francis Ltd

ISSN： 1542-1406

Source： Molecular Crystals and Liquid Crystals, Vol.550, Iss.1, 2011-11, pp. : 112-118

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