Fourier transform IR monitoring of porous silicon passivation during post-treatments such as anodic oxidation and contact with organic solvents

By Hory M.A.   Herino R.   Ligeon M.   Muller F.   Gaspard F.   Mihalcescu I.   Vial J.C.  

Thin Solid Films, Vol. 255, Iss. 1, 1995-01 ,pp. : 200-203

Elsevier

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Characterization of porous silicon-on-insulator films prepared by anodic oxidation

By Lee C.H.   Yeh C.C.   Hwang H.L.   Hsu K.Y.J.  

Thin Solid Films, Vol. 276, Iss. 1, 1996-04 ,pp. : 147-150

Elsevier

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Influence of oxidation and carbon-containing contamination in the stabilization of the luminescence in porous silicon

By Guerrero-Lemus R.   Moreno J.D.   Martn-Palma R.J.   Ben-Hander F.   Martnez-Duart J.M.   Fierro J.L.G.   Gomez-Garrido P.  

Thin Solid Films, Vol. 354, Iss. 1, 1999-10 ,pp. : 34-37

Elsevier

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Influence of the oxidation process on the luminescence of HF-treated porous silicon

By Dittrich T.   Flietner H.   Timoshenko V.Y.   Kashkarov P.K.  

Thin Solid Films, Vol. 255, Iss. 1, 1995-01 ,pp. : 149-151

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On the origin of the porous silicon luminescence

By Zeman J.   Zigone M.   Martinez G.   Rikken G.L.J.A.   Bordet P.   Chenavas J.  

Thin Solid Films, Vol. 255, Iss. 1, 1995-01 ,pp. : 35-38

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