Interface recombination and photoluminescence efficiency of thick (> 3 m) InGaAs prepared by LPE with InAs-enriched composition

Author： Parry M.K.   Krier A.  

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.259, Iss.2, 1995-04, pp. : 163-166

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