Spectroscopic ellipsometry studies of buried CoSi 2 layers in Si formed by ion implantation with a metal vapor vacuum arc ion source

By Guo W.S.  

Thin Solid Films, Vol. 375, Iss. 1, 2000-10 ,pp. : 280-283

Elsevier

Access to resources Recommend Favorite

Structure characteristic of buried SiC layers

By Yan H.   Wang B.   Song X.   Chen G.   Wong S.P.   Kwok R.W.M.  

Thin Solid Films, Vol. 368, Iss. 2, 2000-06 ,pp. : 241-243

Elsevier

Access to resources Recommend Favorite

Sputtered Ohmic Cobalt Silicide Contacts to 4H-SiC

By  

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 440-443

Trans Tech Publications

Access to resources Recommend Favorite

High-fluence ion implantation of In into Al crystals: formation and evolution of buried layers

By Touboltsev V. S.   Dybkjaer G.   Johansen A.   Johnson E.   Sarholt L.   Andersen H. H.   Olsen M.  

Philosophical Magazine. A. Physics of Condensed Matter. Defects and Mechanical Properties, Vol. 77, Iss. 2, 1998-02 ,pp. : 341-354

Taylor & Francis Ltd

Access to resources Recommend Favorite

Characterization of silicide precipitates in Nb–Si and Nb–Ti–Si alloys

By Grylls R. J.   Bewlay B. P.   Lipsitt H. A.   Fraser H. L.  

Philosophical Magazine. A. Physics of Condensed Matter. Defects and Mechanical Properties, Vol. 81, Iss. 8, 2001-08 ,pp. : 1967-1978

Taylor & Francis Ltd

Access to resources Recommend Favorite