High-fluence ion implantation of In into Al crystals: formation and evolution of buried layers

Author: Touboltsev V. S.   Dybkjaer G.   Johansen A.   Johnson E.   Sarholt L.   Andersen H. H.   Olsen M.  

Publisher: Taylor & Francis Ltd

ISSN: 0141-8610

Source: Philosophical Magazine. A. Physics of Condensed Matter. Defects and Mechanical Properties, Vol.77, Iss.2, 1998-02, pp. : 341-354

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content