Spectroscopic ellipsometry of Si x Ge 1-x /Si: a tool for composition and profile analysis in strained heterostructures used in the microelectronics industry

By Ferrieu F.   Ribot P.   Regolini J.L.  

Thin Solid Films, Vol. 373, Iss. 1, 2000-09 ,pp. : 211-215

Elsevier

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Optical characterization by spectroscopic ellipsometry of polycrystalline Si 1-x Ge x of variable Ge composition up to 100% Ge

By Ferrieu F.   Morin C.   Regolini J.L.  

Thin Solid Films, Vol. 315, Iss. 1, 1998-03 ,pp. : 316-321

Elsevier

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Experimental study of a surfactant-assisted SiGe graded layer and a symmetrically strained Si/Ge superlattice for thermoelectric applications

By Liu J.L.   Wang K.L.   Moore C.D.   Goorsky M.S.   Borca-Tasciuc T.   Chen G.  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 121-125

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Characterization of SiGe strained heterostructures grown by molecular beam epitaxy using a Si effusion cell

By Yaguchi H.   Yamamoto T.   Shiraki Y.  

Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 241-244

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SiGe - heterostructures for CMOS technology

By Whall T.E.   Parker E.H.C.  

Thin Solid Films, Vol. 367, Iss. 1, 2000-05 ,pp. : 250-259

Elsevier

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