Spectroscopic ellipsometry of Si x Ge 1-x /Si: a tool for composition and profile analysis in strained heterostructures used in the microelectronics industry

Author: Ferrieu F.   Ribot P.   Regolini J.L.  

Publisher: Elsevier

ISSN: 0040-6090

Source: Thin Solid Films, Vol.373, Iss.1, 2000-09, pp. : 211-215

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Abstract