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By Voitsekhovskii A.   Nesmelov S.   Dzyadukh S.   Varavin V.   Dvoretskii S.   Mikhailov N.   Sidorov Yu.   Vasil’ev V.   Yakushev M.  

Russian Physics Journal, Vol. 53, Iss. 2, 2010-07 ,pp. : 148-154

Springer Publishing Company

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The dynamics of accumulation of electrically active radiation defects on implantation of graded-band-gap HgCdTe films grown by MBE

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Russian Physics Journal, Vol. 49, Iss. 9, 2006-09 ,pp. : 929-933

Springer Publishing Company

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Photoelectrical characteristics of MIS structures on the basis of graded-band-gap n-HgCdTe (x = 0.21–0.23)

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Russian Physics Journal, Vol. 49, Iss. 10, 2006-10 ,pp. : 1117-1128

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HgCdTe technology in France

By Tribolet P.  

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Thin films of HgCdTe on silicon surfaces

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