Neutral dangling bonds may not be the dominant recombination centers for photoconductivity in hot-wire a-Si:H

By Han D.   Yue G.   Wang Q.   Shimizu T.  

Thin Solid Films, Vol. 430, Iss. 1, 2003-04 ,pp. : 141-144

Elsevier

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New feature of the photoconductivity in p-type a-Si:H: independence of photoconductivity of p-type a-Si:H films on doping level and defect concentration

By Kuznetsov S.V.  

Thin Solid Films, Vol. 383, Iss. 1, 2001-02 ,pp. : 261-263

Elsevier

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Recombination at high charge carrier concentrations in a-Si:H films

By Kunst M.   Wunsch F.   von Aichberger S.  

Thin Solid Films, Vol. 383, Iss. 1, 2001-02 ,pp. : 274-276

Elsevier

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Recombination kinetics of very-long-lived photoluminescence decay in a-Si:H correlated with light-induced spin densities

By Aoki T.  

Philosophical Magazine Letters, Vol. 86, Iss. 3, 2006-03 ,pp. : 137-145

Taylor & Francis Ltd

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On the growth mechanism of a-Si:H

By Kessels W.M.M.   Smets A.H.M.   Marra D.C.   Aydil E.S.   Schram D.C.   van de Sanden M.C.M.  

Thin Solid Films, Vol. 383, Iss. 1, 2001-02 ,pp. : 154-160

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