Structural and electrical properties of low temperature polycrystalline silicon deposited using SiF 4 -SiH 4 -H 2

Author： Ryu B.Y. Lim H.J. Ryu J.I. Jang J.

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.289, Iss.1, 1996-11, pp. : 227-233

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