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Vacuum, Vol. 48, Iss. 3, 1997-03 ,pp. : 273-275

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Distributed growth model used for the interpretation of RHEED intensity oscillations observed during the growth of Pb on Si(111) substrates

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The influence of growth temperature on the period of RHEED oscillations during MBE of Si and Ge on Si(111) surface

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RHEED analysis of twinned homoepitaxial layers grown on Si(111)ð3xð3-B

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Surface states in one-dimensional photonic band gap structures

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