Characterization of fluorine-doped silicon dioxide film by Raman spectroscopy

Author： Yoshikawa M.   Iwagami K.   Morita N.   Matsunobe T.   Ishida H.  

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.310, Iss.1, 1997-11, pp. : 167-170

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Characterization of carbon film by Raman spectroscopy

By Iqbal Tahir   Sajjad Muhammad   Imran Muhammad   Sadiq Mehboob   Zakaullah Muhammad  

Radiation Effects and Defects in Solids, Vol. 164, Iss. 3, 2009-03 ,pp. : 153-161

Taylor & Francis Ltd

Access to resources Recommend Favorite

Raman spectroscopy of B-doped microcrystalline silicon films

By Saleh R.   Nickel N.H.  

Thin Solid Films, Vol. 427, Iss. 1, 2003-03 ,pp. : 266-269

Elsevier

Access to resources Recommend Favorite

Improved gap-filling capability of fluorine-doped PECVD silicon oxide thin films

By Lee P.   Verma A.   Nguyen B.   Mizuno S.  

Thin Solid Films, Vol. 279, Iss. 1, 1996-06 ,pp. : 82-86

Elsevier

Access to resources Recommend Favorite

Study of the material properties and suitability of plasma-deposited fluorine-doped silicon dioxides for low dielectric constant interlevel dielectrics

By Shannon V.L.   Karim M.Z.  

Thin Solid Films, Vol. 270, Iss. 1, 1995-12 ,pp. : 498-502

Elsevier

Access to resources Recommend Favorite

Improved characterization of polycrystalline silicon film, by resonant Raman scattering

By Paillard V.   Puech P.   Temple-Boyer P.   Caussat B.   Scheid E.   Couderc J.P.   de Mauduit B.  

Thin Solid Films, Vol. 337, Iss. 1, 1999-01 ,pp. : 93-97

Elsevier

Access to resources Recommend Favorite