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Thin Solid Films, Vol. 440, Iss. 1, 2003-09 ,pp. : 169-173

Elsevier

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A simple low-temperature laser-doping employing phosphosilicate glass and borosilicate glass films for the source and drain formation in poly-Si thin film transistors

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Low temperature poly-Si TFT-LCD by excimer laser anneal

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Preparation of poly-Si films by Cat-CVD for thin film transistor

By Sunayama H.   Yamada K.   Karasawa M.   Ishibashi K.  

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Influences of directional crystallization using field aided lateral crystallization on the electrical characteristics of poly-Si thin film transistors

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