Lateral and depth inhomogeneities in Zn-based heterostructures grown on GaAs by MBE

By Venger E.F.   Sadof'ev Y.G.   Semenova G.N.   Korsunskaya N.E.   Klad'ko V.P.   Shechovtsov L.V.   Semtsiv M.P.   Borkovskaya L.V.   Sapko S.Y.  

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Characteristics of electron traps in Si-doped Ga 0.51 In 0.49 P and electrical properties of modulation doped GaInP/InGaAs/GaAs heterostructures

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Thin Solid Films, Vol. 338, Iss. 1, 1999-01 ,pp. : 213-219

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Growth and characterization of p-type GaAs/(AlGa) as heterostructures grown on high-index GaAs surfaces

By Henini M.   Rodgers P.J.   Crump P.A.   Gallagher B.L.   Hayden R.K.   Eaves L.  

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Characterization of GaAs buffer layer function in GaAs/InP strained structure grown by MBE

By Wang C.-Y.   Chou Y.-C.   Lee C.-T.  

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Structural properties of MBE grown GaMnAs layers

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