High rate sapphire (Al 2 O 3 ) etching in inductively coupled plasmas using axial external magnetic field

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Thin Solid Films, Vol. 435, Iss. 1, 2003-07 ,pp. : 242-246

Elsevier

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SiO 2 Etching using high density plasma sources

By Tsukada T.   Nogami H.   Nakagawa Y.   Wani E.   Mashimo K.   Sato H.   Samukawa S.  

Thin Solid Films, Vol. 341, Iss. 1, 1999-03 ,pp. : 84-90

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SiO 2 etching in inductively coupled C 2 F 6 plasmas: surface chemistry and two-dimensional simulations

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Thin Solid Films, Vol. 374, Iss. 2, 2000-10 ,pp. : 311-325

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Application of magnetic neutral loop discharge plasma to SiO 2 etching process

By Chen W.   Hayashi T.   Itoh M.   Morikawa Y.   Sugita K.   Uchida T.  

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Surface reaction processes in C 4 F 8 and C 5 F 8 plasmas for selective etching of SiO 2 over photo-resist

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