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Elsevier

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Ge segregation mechanism during Si/Ge multilayer growth

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Residual strain and surface roughness of Si 1-x Ge x alloy layers grown by molecular beam epitaxy on Si(001) substrate

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Growth of epitaxial SiGe nanostructures at low temperature on Si(100) using hot-wire assisted gas source molecular beam epitaxy

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Atomic control of doping during SiGe epitaxy

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