Improved growth morphology of Si-Ge-C heterostructures through the use of Sb surfactant-assisted molecular beam epitaxy

By Croke E.T.   Hunter A.T.   Pettersson P.O.   Ahn C.C.   McGill T.C.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 105-111

Elsevier

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Structural characterization of SiGe step graded buffer layers grown on prestructured Si[001] substrates by molecular beam epitaxy

By Muller E.   Hartmann R.   David C.   Grutzmacher D.  

Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 92-95

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Intense visible photoluminescence from molecular beam epitaxy porous Si 1-x Ge x grown on Si

By Unal B.   Bayliss S.C.   Phillips P.   Parker E.H.C.  

Thin Solid Films, Vol. 305, Iss. 1, 1997-08 ,pp. : 274-279

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Characterization of SiGe strained heterostructures grown by molecular beam epitaxy using a Si effusion cell

By Yaguchi H.   Yamamoto T.   Shiraki Y.  

Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 241-244

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The structural characterisation of molecular beam epitaxy-grown exchange-biased bilayers

By Choi Y.S.   Petford-Long A.K.   Ward R.C.C.   Wells M.R.  

Thin Solid Films, Vol. 413, Iss. 1, 2002-06 ,pp. : 41-45

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