Author： Mantl S. Hacke M. Bay H.L. Kappius L. Mesters S.
Publisher： Elsevier
ISSN： 0040-6090
Source： Thin Solid Films, Vol.321, Iss.1, 1998-05, pp. : 251-255
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Comparison of epitaxial growth of CoSi 2 among Co/Ti, Co/Hf, and Co/Nb bilayers on (100)Si
Thin Solid Films, Vol. 380, Iss. 1, 2000-12 ,pp. :
Access to resources
Recommend
Growth of epitaxial CoSi 2 for contacts of ultra-thin SOI MOSFETs
By Sakamoto K. Maeda T. Hasegawa M.
Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. :
The growth of CoSi 2 through an oxide layer: dependence on Si(100) surface structure
Thin Solid Films, Vol. 379, Iss. 1, 2000-12 ,pp. :
Submicrometer patterning of epitaxial CoSi 2 /Si(111) by local oxidation
By Klinkhammer F. Kappius L. Mesters S. Mantl S.
Thin Solid Films, Vol. 318, Iss. 1, 1998-04 ,pp. :