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Growth and optical properties of epitaxial GaN films on Si(111) using single gas-source molecular beam epitaxy

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Growth of epitaxial SiGe nanostructures at low temperature on Si(100) using hot-wire assisted gas source molecular beam epitaxy

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Influence of misfit strain on {311} facet development in selective epitaxial growth of Si 1-x Ge x /Si(100) grown by gas-source molecular beam epitaxy

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