Effect of GaAs surface treatments using HCl or (NH 4 ) 2 S x solutions on the interfacial bonding states induced by deposition of Au

Author: Kang M.-G.   Park H.-H.  

Publisher: Elsevier

ISSN: 0040-6090

Source: Thin Solid Films, Vol.332, Iss.1, 1998-11, pp. : 437-443

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Abstract