Author: Yugova T.G. Vdovin V.I. Mil'vidskii M.G. Orlov L.K. Tolomasov V.A. Potapov A.V. Abrosimov N.V.
Publisher: Elsevier
ISSN: 0040-6090
Source: Thin Solid Films, Vol.336, Iss.1, 1998-12, pp. : 112-115
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Formation of relaxed SiGe films on Si by selective epitaxial growth
By Kawaguchi K. Usami N. Shiraki Y.
Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. :
Gas-source molecular beam epitaxial growth of SiGe alloy-based `naked' quantum wells
By Kishimoto Y. Shiraki Y. Fukatsu S.
Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. :
Titanium metallization of Si/Ge alloys and superlattices
By Freiman W. Beserman R. Dettmer K.
Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. :