Growth of epitaxial SiGe nanostructures at low temperature on Si(100) using hot-wire assisted gas source molecular beam epitaxy

By Koulmann J.J.   Chelly R.   Angot T.   Louis P.   Bolmont D.   Werckmann J.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 84-87

Elsevier

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Growth and optical properties of epitaxial GaN films on Si(111) using single gas-source molecular beam epitaxy

By Torrison L.   Tolle J.   Tsong I.S.T.   Kouvetakis J.  

Thin Solid Films, Vol. 434, Iss. 1, 2003-06 ,pp. : 106-111

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Influence of misfit strain on {311} facet development in selective epitaxial growth of Si 1-x Ge x /Si(100) grown by gas-source molecular beam epitaxy

By D. U'Ren G.   Goorsky M.S.   Wang K.L.  

Thin Solid Films, Vol. 365, Iss. 1, 2000-04 ,pp. : 147-150

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Effect of Ge on the P doping in Si gas-source molecular beam epitaxy using Si 2 H 6 and PH 3

By Hirose F.  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 230-232

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Low temperature epitaxial growth of Si on Si(111) by gas-source MBE with heat-pulse annealing

By Ishikawa T.   Okumura H.   Akane T.   Sano M.   Giraud S.   Nakabayashi Y.   Matsumoto S.  

Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 232-235

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