Author： Weller J. Jorke H. Strohm K. Luy J.-F. Kibbel H. Herzog H.-J. Sauer R.
Publisher： Elsevier
ISSN： 0040-6090
Source： Thin Solid Films, Vol.336, Iss.1, 1998-12, pp. : 137-140
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Si 1-x Ge x selective epitaxial growth for ultra-high-speed self-aligned HBTs
By Oda K. Ohue E. Tanabe M. Shimamoto H. Washio K.
Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. :
Access to resources
Recommend
High-speed transport in Si/Si 1-x-y Ge x C y heterostructures
By Muhlberger M. Schelling C. Sandersfeld N. Seyringer H. Schaffler F.
Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. :
Hot carrier transport in modulation doped Si/SiGe and Ge/SiGe heterostructures
Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. :