Low temperature epitaxial growth of Si on Si(111) by gas-source MBE with heat-pulse annealing

Author: Ishikawa T.   Okumura H.   Akane T.   Sano M.   Giraud S.   Nakabayashi Y.   Matsumoto S.  

Publisher: Elsevier

ISSN: 0040-6090

Source: Thin Solid Films, Vol.336, Iss.1, 1998-12, pp. : 232-235

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Abstract