Electronic properties of bottom gate silicon nitride/hydrogenated amorphous silicon structures

Author： Kleider J.P.   Longeaud C.   Dayoub F.  

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.337, Iss.1, 1999-01, pp. : 208-212

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Influence of heterogeneities on the electronic properties of hydrogenated amorphous silicon

By Agarwal S.C.  

Philosophical Magazine, Vol. 94, Iss. 15, 2014-05 ,pp. : 1642-1660

Taylor & Francis Ltd

Access to resources Recommend Favorite

Hydrogen-induced electronic states and vibrational modes in hydrogenated amorphous silicon nitride

By Lin S.-Y.  

Thin Solid Films, Vol. 395, Iss. 1, 2001-09 ,pp. : 101-104

Elsevier

Access to resources Recommend Favorite

The effect of thermal annealing on the properties of PECVD hydrogenated silicon nitride

By  

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Vol. 9, Iss. 10‐11, 2012-10 ,pp. : 2189-2193

John Wiley & Sons Inc

Access to resources Recommend Favorite

Luminescence and recombination in hydrogenated amorphous silicon

By Street R.A.  

Advances In Physics, Vol. 30, Iss. 5, 1981-10 ,pp. : 593-676

Taylor & Francis Ltd

Access to resources Recommend Favorite

Studies of photodegradation in hydrogenated amorphous silicon

By Clare B.W.   Cornish J.C.L.   Hefter G.T.   Jennings P.J.   Lund C.P.   Santjojo D.J.   Talukder M.O.G.  

Thin Solid Films, Vol. 288, Iss. 1, 1996-11 ,pp. : 76-82

Elsevier

Access to resources Recommend Favorite