Thin film transistors in low temperature as-deposited and reduced-crystallization-time polysilicon on 665 o C strain point glass substrates

Author： Hatalis M.K. Kouvatsos D.N. Kung J.H. Voutsas A.T. Kanicki J.

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.338, Iss.1, 1999-01, pp. : 281-285

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