Stability of unhydrogenated polysilicon thin film transistors and structural quality of the channel material

By Toutah H.   Tala-Ighil B.   Llibre J.F.   Rahal A.   Mourgues K.   Helen Y.   Mohammed-Brahim T.   Dassow R.   Kohler J.R.  

Thin Solid Films, Vol. 383, Iss. 1, 2001-02 ,pp. : 299-302

Elsevier

Access to resources Recommend Favorite

Thin film transistors in low temperature as-deposited and reduced-crystallization-time polysilicon on 665 o C strain point glass substrates

By Hatalis M.K.   Kouvatsos D.N.   Kung J.H.   Voutsas A.T.   Kanicki J.  

Thin Solid Films, Vol. 338, Iss. 1, 1999-01 ,pp. : 281-285

Elsevier

Access to resources Recommend Favorite

In-situ low-temperature (600 o C) wafer surface cleaning by electron cyclotron resonance hydrogen plasma for silicon homoepitaxial growth

By Kim H.-W.   Reif R.  

Thin Solid Films, Vol. 289, Iss. 1, 1996-11 ,pp. : 192-198

Elsevier

Access to resources Recommend Favorite

Temperature analysis of polysilicon thin-film transistors made by excimer laser crystallization

By Foglietti V.   Mariucci L.   Fortunato G.  

Thin Solid Films, Vol. 337, Iss. 1, 1999-01 ,pp. : 196-199

Elsevier

Access to resources Recommend Favorite

Electrical in‐situ characterisation of interface stabilised organic thin‐film transistors

By  

PHYSICA STATUS SOLIDI - RAPID RESEARCH LETTERS (ELECTRONIC), Vol. 9, Iss. 7, 2015-07 ,pp. : 420-424

John Wiley & Sons Inc

Access to resources Recommend Favorite