The influence of hydrogen dilution ratio on the crystallization of hydrogenated amorphous silicon films prepared by plasma-enhanced chemical vapor deposition

By Kim H.-Y.   Lee K.-Y.   Lee J.-Y.  

Thin Solid Films, Vol. 302, Iss. 1, 1997-06 ,pp. : 17-24

Elsevier

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Effect of GeF 4 addition on the growth of hydrogenated microcrystalline silicon film by plasma-enhanced chemical vapor deposition

By Shirai H.   Fukuda Y.   Nakamura T.   Azuma K.  

Thin Solid Films, Vol. 350, Iss. 1, 1999-08 ,pp. : 38-43

Elsevier

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Optical, structural and electrical properties of devicequality hydrogenated amorphous silicon-nitrogen films deposited by plasma-enhanced chemical vapour deposition

By Giorgis F.   Giuliani F.   Pirri C. F.   Tresso E.   Summonte C.   Rizzoli R.   Galloni R.   Desalvo A.   Rava P.  

Philosophical Magazine B, Vol. 77, Iss. 4, 1998-04 ,pp. : 925-944

Taylor & Francis Ltd

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Ion-beam processing of hydrogenated amorphous silicon carbide grown by plasma-enhanced chemical vapour deposition

By Calcagno L.   Giorgis F.   Makhtari A.   Musumeci P.   Reitano R.  

Philosophical Magazine B, Vol. 80, Iss. 4, 2000-04 ,pp. : 539-546

Taylor & Francis Ltd

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Study of the effect of different plasma-enhanced chemical vapour deposition reactor configurations on the properties of hydrogenated amorphous silicon thin films

By Aguas H.   Silva V.   Ferreira I.   Fortunato E.   Martins R.  

Philosophical Magazine B, Vol. 80, Iss. 4, 2000-04 ,pp. : 475-486

Taylor & Francis Ltd

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