Fabrication of a depletion mode GaAs MOSFET using Al 2 O 3 as a gate insulator through the selective wet oxidation of AlAs

Author： Jun B.-K.   Kim D.-H.   Leem J.-Y.   Lee J.-H.   Lee Y.-H.  

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.360, Iss.1, 2000-02, pp. : 229-232

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