Investigations on the growth mechanism of wide-gap II-VI semiconductors by means of reflection high energy electron diffraction

Author： Griesche J.

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.367, Iss.1, 2000-05, pp. : 159-164

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Wide band-gap II-VI compounds-can efficient doping be achieved?

By Desnica U.V.

Vacuum, Vol. 50, Iss. 3, 1998-07 ,pp. : 463-471

Elsevier

Access to resources Recommend Favorite

Reflection high-energy electron loss spectroscopy (RHEELS): a new approach in the investigation of epitaxial thin film growth by reflection high-energy electron diffraction (RHEED)

By Masek K. Moroz V. Matoln V.

Vacuum, Vol. 71, Iss. 1, 2003-05 ,pp. : 59-64

Elsevier

Access to resources Recommend Favorite

Epitaxial growth of II-VI compound semiconductors by atomic layer epitaxy

By Hsu C.T.

Thin Solid Films, Vol. 335, Iss. 1, 1998-11 ,pp. : 284-291

Elsevier

Access to resources Recommend Favorite

Peculiarities of the MBE growth physics and technology of narrow-gap II-VI compounds

By Sidorov Y.G. Dvoretsky S.A. Mikhailov N.N. Yakushev M.V. Varavin V.S. Liberman V.I.

Thin Solid Films, Vol. 306, Iss. 2, 1997-09 ,pp. : 253-265

Elsevier

Access to resources Recommend Favorite

Properties of II–VI semiconductors associated with moving dislocations

By Osip'yan Yu.A. Petrenko V.F. Zaretskii˘ A.V. Whitworth R.W.

Advances In Physics, Vol. 35, Iss. 2, 1986-01 ,pp. : 115-188

Taylor & Francis Ltd

Access to resources Recommend Favorite