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Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 186-189

Elsevier

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Integration of SiGe heterojunction bipolar transistors in a 200 mm industrial BiCMOS technology

By De Berranger E.   Bodnar S.   Chantre A.   Regolini J.L.   Mouis M.   Kirtsch J.   Monroy A.   Granier A.   Laurens M.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 250-253

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The effect of 63 MeV hydrogen ion irradiation on 65 GHz UHV/CVD SiGe HBT BiCMOS technology

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Radiation Effects and Defects in Solids, Vol. 166, Iss. 8-9, 2011-09 ,pp. : 703-709

Taylor & Francis Ltd

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Applications of variable angle spectroscopic ellipsometry to strained SiGe alloy heterostructures

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Novel microscopic properties and the electronic structure of SiGe heterostructures and related systems

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