Alternatives to thick MBE-grown relaxed SiGe buffers

By Hackbarth T.   Herzog H.-J.   Zeuner M.   Hock G.   Fitzgerald E.A.   Bulsara M.   Rosenblad C.   von Kanel H.  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 148-151

Elsevier

Access to resources Recommend Favorite

Growth study of surfactant-mediated relaxed SiGe graded layers for 1.55- m photodetector applications

By Liu J.L.   Radetic T.   Tang Y.S.   Teng D.   Jin G.   Luo Y.H.   Wan J.   Gronsky R.   Wang K.L.  

Thin Solid Films, Vol. 380, Iss. 1, 2000-12 ,pp. : 54-56

Elsevier

Access to resources Recommend Favorite

Formation of relaxed SiGe films on Si by selective epitaxial growth

By Kawaguchi K.   Usami N.   Shiraki Y.  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 126-129

Elsevier

Access to resources Recommend Favorite

Novel strained Si/relaxed SiGe channel PMOSFETs

By Li C.   Luo G.   Liu Z.   Chen P.   Tsien P.-H.  

Thin Solid Films, Vol. 409, Iss. 1, 2002-04 ,pp. : 112-115

Elsevier

Access to resources Recommend Favorite

High quality, relaxed SiGe epitaxial layers for solar cell application

By Said K.   Poortmans J.   Caymax M.   Loo R.   Daami A.   Bremond G.   Kruger O.   Kittler M.  

Thin Solid Films, Vol. 337, Iss. 1, 1999-01 ,pp. : 85-89

Elsevier

Access to resources Recommend Favorite