Thermal emission of holes from confined levels in strained SiGe channel p-MOSFETS

By Gamez-Cuatzin H.   Marchand J.-J.   Bremond G.   Garchery L.   Campidelli Y.   Berenguer M.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 211-213

Elsevier

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Relaxed Si 0.7 Ge 0.3 buffer layers grown on patterned silicon substrates for SiGe n-channel HMOSFETs

By Wohl G.   Dudek V.   Graf M.   Kibbel H.   Herzog H.-J.   Klose M.  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 175-181

Elsevier

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Study of uniform and graded SiGe channel heterojunction p-MOSFETs using Monte Carlo simulation

By Dollfus P.   Galdin S.   Arbey M.-E.   Hesto P.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 259-262

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HRTEM study of strained Si/Ge multilayers

By Romeo M.   Uhlaq-Bouillet C.   Deville J.P.   Werckmann J.   Ehret G.   Chelly R.   Dentel D.   Angot T.   Bischoff J.L.  

Thin Solid Films, Vol. 319, Iss. 1, 1998-04 ,pp. : 168-171

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Formation of strained-silicon layer on thin relaxed-SiGe/SiO 2 /Si structure using SIMOX technology

By Sugiyama N.   Mizuno T.   Takagi S.   Koike M.   Kurobe A.  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 199-202

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