Low temperature epitaxial growth of Si on Si(111) by gas-source MBE with heat-pulse annealing

By Ishikawa T.   Okumura H.   Akane T.   Sano M.   Giraud S.   Nakabayashi Y.   Matsumoto S.  

Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 232-235

Elsevier

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Photo-thermal excitation gas-source MBE growth of super-doped Si:Mn for spin-photonics applications

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Thin Solid Films, Vol. 395, Iss. 1, 2001-09 ,pp. : 230-234

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Growth and optical properties of epitaxial GaN films on Si(111) using single gas-source molecular beam epitaxy

By Torrison L.   Tolle J.   Tsong I.S.T.   Kouvetakis J.  

Thin Solid Films, Vol. 434, Iss. 1, 2003-06 ,pp. : 106-111

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Effect of Ge on the P doping in Si gas-source molecular beam epitaxy using Si 2 H 6 and PH 3

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Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 230-232

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GaInAsP gas-source MBE technology

By Pessa M.   Tappura K.   Ovtchinnikov A.  

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