Growth and optical properties of epitaxial GaN films on Si(111) using single gas-source molecular beam epitaxy

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Thin Solid Films, Vol. 434, Iss. 1, 2003-06 ,pp. : 106-111

Elsevier

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Effects of atomic hydrogen on growth behavior of Si films by Si 2 H 6 -source molecular beam epitaxy

By Yasuda Y.   Matsuyama T.   Sato K.   Kondo M.   Ikeda H.   Zaima S.  

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Influence of misfit strain on {311} facet development in selective epitaxial growth of Si 1-x Ge x /Si(100) grown by gas-source molecular beam epitaxy

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Growth of epitaxial SiGe nanostructures at low temperature on Si(100) using hot-wire assisted gas source molecular beam epitaxy

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Gas-source molecular beam epitaxial growth of SiGe alloy-based `naked' quantum wells

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