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By Joelsson K.B.   Ni W.-X.   Pozina G.   Hultman L.   Hansson G.V.  

Vacuum, Vol. 49, Iss. 3, 1998-03 ,pp. : 185-188

Elsevier

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Si/Si 1-x Ge x and Si/Si 1-y C y heterostructures: materials for high-speed field-effect transistors

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Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 1-10

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Comparison of Si/Si 1-x-y Ge x C y and Si/Si 1-y C y heterojunctions grown by rapid thermal chemical vapor deposition

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Field-enhanced Stokes shifts in strained Si 1-y C y /Si(001) quantum wells

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Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 402-404

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Epitaxial growth of strained Si 1-y C y films by the hot-wire cell method and its application to metal oxide semiconductor devices

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